Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2000-05-11
2001-10-23
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S481000, C438S482000, C438S492000, C438S502000, C438S509000
Reexamination Certificate
active
06306735
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for producing a semiconductor wafer, in particular a silicon wafer, which is provided with an epitaxial layer. The present invention relates in particular to the treatment of the semiconductor wafer following deposition of the epitaxial layer by using an ozone containing atmosphere.
2. The Prior Art
It is known that the surface of a freshly deposited epitaxial layer tends to undergo reactions with suitable molecules in the atmosphere. The manufacturers of electronic components who subject such semiconductor wafers to further processing have an interest in ensuring that the surface of the semiconductor wafer is in a defined condition. This means that the semiconductor wafers which are to be further processed have surfaces in a uniform condition.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a semiconductor wafer having a surface which is in such a defined uniform condition. It is a further object of the present invention to permit the production of the semiconductor wafer to be incorporated into existing methods without particular difficulty and without particular costs.
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Collard & Roe P.C.
Dang Trung
Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
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