Method for producing a semiconductor structure

Details Method for producing a semiconductor structure Method for producing a semiconductor structure

2008-01-01

2008-01-01

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S197000, C438S689000, C438S510000, C438S514000, C438S527000, C438S531000, C438S299000, C438S301000, C438S306000, C257SE21645, C257SE21691, C257SE21660, C257SE21690, C257SE21678

Reexamination Certificate

active

11282432

ABSTRACT:
In a method for producing a semiconductor structure a semiconductor a substrate with a top surface is provided. A gate dielectric layer is provided on the top surface and on the gate dielectric layer is provided a memory cell array region with a first plurality of gate stacks and a peripheral element region with a second plurality of gate stacks. A dielectric layer is provided over the memory cell array region and the peripheral element region. A first source/drain implantation over the memory cell array region and the peripheral element region is carried out, a blocking mask over the memory cell array region is formed, the dielectric layer is removed using the blocking mask, and a second source/drain implantation over the memory cell array region and the peripheral element region is carried out, wherein the memory cell array region is protected by a mask.

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Taiwanese Pre-Examination Report dated Feb. 1, 2007.

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