Method for producing a semiconductor device including doping wit

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

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438162, 438487, H01L 2100, H01L 2184, H01L 2120, H01L 2136

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058307842

ABSTRACT:
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where lead serving as a crystallization-promoting catalyst is introduced.

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