Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-09-19
1998-11-03
Dutton, Brian
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438162, 438487, H01L 2100, H01L 2184, H01L 2120, H01L 2136
Patent
active
058307842
ABSTRACT:
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where lead serving as a crystallization-promoting catalyst is introduced.
REFERENCES:
patent: 3692574 (1972-09-01), Kobayashi
patent: 4727044 (1988-02-01), Yamazaki
patent: 4904611 (1990-02-01), Chiang et al.
patent: 4986213 (1991-01-01), Yamazaki et al.
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5262350 (1993-11-01), Yamazaki
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara
patent: 5288658 (1994-02-01), Ishihara
patent: 5296405 (1994-03-01), Yamazaki et al.
patent: 5318661 (1994-06-01), Kumomi
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5531182 (1996-07-01), Yonehara
patent: 5545571 (1996-08-01), Yamasaki et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages) Oct., 1991.
A.V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640, 1986.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
"Laser Direct-Write Metallization In Thin Palldium Acetate Films," M.E. Gross et al., J. Appl. Phys. 61(4), Feb. 15, 1987.
"In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization Of Amorphous Silicon," Hayzelden et al. (3 pages) Oct., 1991.
"Transport Phenomena In Amorphous Silicon Doped By Ion Implantation Of 3d Metals", A. V. Dvurechenskii et al., Akademikian Lavrentev Prospekt 13, 530090 Novosibirsk 90, USSR, pp. 635-640, 1986.
"Needle-Like Crystallization Of Ni Doped Amorphous Silicon Thin Films," Hempel, et al. Solid State Communications, vol. 85, No. 11, pp. 921-924, Mar., 1993.
"Polycrystalline Silicon Thin Film Transistors On Corning 7059 Glass Substrates Using Short Time, Low-Temperature Processing,", Appl. Phys. Lett. vol. 62, No. 20, May 17, 1993.
"Selective Area Crystalline Of Amorphous Silicon Films By Low-Temperature Rapid Thermal Annealing," Appl. Phys. Lett., vol. 55, No. 17, Aug. 14, 1989.
Takayama Toru
Zhang Hongyong
Dutton Brian
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Company, Ltd.
Smith Evan R.
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