Method for producing a semiconductor device comprising an implan

Details Method for producing a semiconductor device comprising an implan Method for producing a semiconductor device comprising an implan

1995-10-30

1998-12-15

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438285, H01L 21265

Patent

active

058496203

ABSTRACT:
A method for producing a semiconductor device having a semiconductor layer of SiC is disclosed. The method comprises the steps of applying an insulation layer on the semiconductor layer, implanting first impurity dopant into the semiconductor layer, and annealing this layer at at least about 1500.degree. C. so that the implanted first impurity dopant is activated, wherein the insulating layer comprises AlN as a major component and the insulating layer is applied before the annealing step and maintained on the semiconductor layer during the annealing step.

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Noreika et al., Structural, Optical, and Dielectric Properties of Reactively Sputtered Films in the System A1N-BN, Journal of Vacuum Science & Technology, Jun. 1969, pp. 722-726.

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