Method for producing a semiconductor component

Details Method for producing a semiconductor component Method for producing a semiconductor component

2011-08-23

2011-08-23

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S164000, C438S217000, C438S270000, C257SE21058, C257SE21410, C257SE21633

Reexamination Certificate

active

08003456

ABSTRACT:
A method for producing a semiconductor component is proposed. The method includes providing a semiconductor body having a first surface; forming a mask on the first surface, wherein the mask has openings for defining respective positions of trenches; producing the trenches in the semiconductor body using the mask, wherein mesa structures remain between adjacent trenches; introducing a first dopant of a first conduction type using the mask into the bottoms of the trenches; carrying out a first thermal step; introducing a second dopant of a second conduction type, which is complementary to the first conduction type, at least into the bottoms of the trenches; and carrying out a second thermal step.

REFERENCES:
patent: 5801075 (1998-09-01), Gardner et al.
patent: 6201278 (2001-03-01), Gardner et al.
patent: 6392273 (2002-05-01), Chang
patent: 6756612 (2004-06-01), Nemati et al.
patent: 2003/0094624 (2003-05-01), Hshieh et al.
patent: 2004/0227182 (2004-11-01), Darwish et al.
patent: 2005/0263853 (2005-12-01), Tomomatsu et al.
patent: 2008/0035987 (2008-02-01), Hebert
patent: 103 19 515 (2004-11-01), None
patent: 10 2005 004 354 (2006-08-01), None
Laska, T. et al.; “Field Stop IGBTs with Dynamic Clamping Capability—A New Degree of Freedom for Future Inverter Designs?”; EPE 2005—Dresden—ISBN: 90-75815-08-5, pp. 1-8.

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