Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reissue Patent
2008-04-29
2008-04-29
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S552000, C438S260000, C438S263000, C438S264000
Reissue Patent
active
11000495
ABSTRACT:
A method for producing a memory cell includes masking a desired polysilicon structure with an oxidation-inhibiting layer, preferably a nitride layer. The polysilicon above source/drain regions and field regions is then converted into silicon dioxide. At the same time, filling with silicon dioxide is effected between adjacent polysilicon paths. The field oxide thickness is increased by the conversion of polysilicon in the field regions as well. A second polysilicon layer is applied over a field region, with inclusion of the oxidation-inhibiting layer present there. One electrode of a capacitor is produced therefrom through the use of marking and etching, with the first polysilicon situated under the oxidation-inhibiting layer forming another electrode and the oxidation-inhibiting layer forming a dielectric. The structure provides a less complex masking and etching technique as well as improved reliability of the components.
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Greenberg Laurence A.
Infineon - Technologies AG
Lindsay, Jr. Walter L
Locher Ralph E.
Stemer Werner H.
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