Method for producing a layer on a substrate

Details Method for producing a layer on a substrate Method for producing a layer on a substrate

2006-08-01

2006-08-01

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S765000

Reexamination Certificate

active

07084075

ABSTRACT:
The invention relates to a method for the production of structures in the nanometer range from larger, existing structures. An elastic strain field in generated in an already structured layer and optionally in a substrate. A strain-dependent diffusion and reaction process subsequently takes place, wherein the existing structure can be reduced in a reproducible manner by means of material transport.

REFERENCES:
patent: 4765169 (1988-08-01), Bradlee
patent: 6309975 (2001-10-01), Wu et al.
patent: 6397922 (2002-06-01), Sachs et al.
patent: 198 53 023 (2000-05-01), None
patent: 0 831 521 (1998-03-01), None
patent: WO 01/69664 (2001-09-01), None
“Si nanostructures formed by pattern-dependent oxidation” by Nagase et al. (Microelectr. Eng, 41/42 1998).
“Stress generation and relaxation in apssivating films . . . ” by Gorokhov et al.(Materials Science Forum vol. 185-188 1995).

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