Method for producing a junction region between a trench and...

Details Method for producing a junction region between a trench and... Method for producing a junction region between a trench and...

2007-12-04

2007-12-04

Ho, Tu-Tu (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S425000, C438S431000, C438S432000, C257S330000, C257S401000, C257SE29262

Reexamination Certificate

active

11027496

ABSTRACT:
A method for producing a junction region (2, 5, 6, 7) between a trench (3) and a semiconductor zone (2) surrounding the trench (3) in a trench semiconductor device (1) has the following steps: application of an oxidation barrier layer (15) to an upper part (O) of the inner walls of the trench (3), and production of a first oxide layer (7) on a lower part (U) of the inner walls, said lower part not being covered by the oxidation barrier layer (15), by means of thermal oxidation of the uncovered (U) part of the inner walls.

REFERENCES:
patent: 5082795 (1992-01-01), Temple
patent: 5126807 (1992-06-01), Baba et al.
patent: 6232171 (2001-05-01), Mei
patent: 2003/0216044 (2003-11-01), Lin et al.
patent: 1 168 455 (2002-01-01), None

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