Method for producing a field effect device having...

Details Method for producing a field effect device having... Method for producing a field effect device having...

2010-09-10

2011-11-01

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21440

Reexamination Certificate

active

08048751

ABSTRACT:
A gate dielectric, an insulating layer and an etching mask are formed on substrate. The etching mask delineates at least the gate electrode and the source and drain contacts and the source, drain and gate output lines of the first metal level of a field effect device. The gate electrode and the future source and drain contacts are formed simultaneously by etching of the insulating layer. A gate material is deposited to form the gate electrode. The source and drain contacts are formed at least in the insulating layer. The source, drain and gate output lines of the first metal level are formed in the etching mask.

REFERENCES:
patent: 6281051 (2001-08-01), Tsutsumi
patent: 6303449 (2001-10-01), Pan et al.
patent: 2009/0140431 (2009-06-01), Feustel et al.

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