Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-06
1998-09-08
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438931, 438135, H01L 21336, H01L 21332
Patent
active
058044833
ABSTRACT:
In a method for producing a channel region layer in a SiC-layer for producing a voltage controlled semiconductor device n-type dopants and p-type dopants are implanted into a near-surface layer of the SiC layer. The p-type dopants implanted have a higher diffusion rate in SiC than the n-type dopants implanted. The SiC-layer is then heated at such a temperature that p-type dopants implanted diffuse from the near-surface layer into the surrounding regions of the SiC-layer being lightly n-doped to such a degree that a channel region layer in which p-type dopants dominates is created.
REFERENCES:
patent: 3451867 (1969-06-01), Taft, Jr. et al.
patent: 4028149 (1977-06-01), Dienes et al.
patent: 4570328 (1986-02-01), Price et al.
patent: 4947218 (1990-08-01), Edmond et al.
patent: 5318915 (1994-06-01), Baliga et al.
patent: 5322802 (1994-06-01), Baliga et al.
patent: 5348895 (1994-09-01), Smayling et al.
patent: 5459809 (1995-10-01), Baliga et al.
patent: 5597744 (1997-01-01), Kamiyama et al.
patent: 5635412 (1997-06-01), Baliga et al.
ABB Research Ltd.
Lebentritt Michael S.
Niebling John
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