Method for producing a capacitor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S210000, C438S251000, C438S393000, C438S394000

Reexamination Certificate

active

07091083

ABSTRACT:
A method for producing a capacitor comprises providing a raw structure having a substrate and at least one dielectric layer, wherein a first area and a second area of the substrate are separated by an isolating layer. Above the first and second areas, an electrically conductive layer is arranged on the at least one dielectric layer. Further, a mask layer is deposited on the electrically conductive layer, wherein it is structured for generating a first mask above the first area. The method further comprises etching away the electrically conductive layer and at least one of the dielectric layers in the second area by means of the first mask and completing an active device in the second area.

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patent: 101 07 012 (2001-09-01), None
patent: 11274415 (1999-10-01), None
patent: 2000156467 (2000-06-01), None
patent: WO 00/54319 (2000-09-01), None

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