Method for producing a Bi-MOS device

Details Method for producing a Bi-MOS device Method for producing a Bi-MOS device

1995-12-18

1997-06-24

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

148DIG9, 257370, 438329, 438204, H01L 21265

Patent

active

056416920

ABSTRACT:
A method for producing a semiconductor device which decrease the number of processes at the time of producing BiCMOSLSI than the usual. Impurities are introduced into a semiconductor substrate under a second insulating film and a first electric conductive film utilizing a first insulating film and the first conductive film formed on the semiconductor substrate as masks. Therefore, it is able to perform concurrent introduction of impurities into the gate electrode, the source and the drain of the MOSFET, the base electrode of the bipolar transistor, the emitter and the collector contact of the lateral bipolar transistor, the outlet electrode of the capacitor, and the resistor, so that the number of process steps can be reduced.

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