Method for processing silicon using etching processes

Details Method for processing silicon using etching processes Method for processing silicon using etching processes

2006-05-30

2006-05-30

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S017000, C216S041000, C216S099000, C438S719000, C438S733000, C438S739000, C438S745000, C438S753000

Reexamination Certificate

active

07052623

ABSTRACT:
A method is proposed for etching a first silicon layer (15) that is provided with an etching mask (10) for defining lateral recesses (21). In a first plasma etching process, trenches (21′) are produced in the region of the lateral recesses (21) by anisotropic etching. The first etching process comes virtually to a standstill as soon as a separating layer (12, 14, 14′, 16), buried between the first silicon layer (15) and a further silicon layer (17), is reached. This separating layer is thereupon etched through in exposed regions (23, 23′) by a second etching process. A subsequent third etching process then etches the further silicon layer (17, 17′). In this manner, free-standing structures for sensor elements can be produced in a simple process which is completely compatible with the method steps in IC integration technology.

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