Method for processing semiconductor substrate

Details Method for processing semiconductor substrate Method for processing semiconductor substrate

2005-12-06

2005-12-06

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S701000

Reexamination Certificate

active

06972235

ABSTRACT:
A method of processing a semiconductor substrate includes a step of forming a trench (16) in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner (10) of the substrate formed at a mouth of the trench (16), by heat-processing the substrate (W). The step of rounding the corner (10) includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850° C.<T<1,050° C., and a process pressure P set to be 0.01 kPa<P<30 kPa.

REFERENCES:
patent: 6291310 (2001-09-01), Madson et al.
patent: 6825087 (2004-11-01), Sharp et al.
patent: 10-12716 (1998-01-01), None
patent: 2000-58780 (2000-02-01), None
patent: 2002-190514 (2002-07-01), None
Tsutomu Sato et al., ‘Trench Transformation Technology using Hydrogen Annealing for Realizing Highly Reliable Device Structure with Thin Dielectric Films’, In: 1998 Symposium on VLSI Technology Digest of Technical Papers: IEEE, 1998, pp. 206 to 207.
S. Matsuda et al., ‘Novel Corner Rounding Process for Shallow Trench Isolation utilizing MSTS (Micro-Structure Transformation of Silicon)’, In: IEDM 1998: IEEE, 1998, pp. 137 to 140.
Kazuo Maeda, “VLSI Process Sochi Handbook”, Kogyo Chosakai Publishing Co., Ltd., Jun. 10, 1990, pp. 155 to 157, 230 to 247.

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