Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2007-07-03
2007-07-03
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S775000, C438S786000, C438S787000, C257SE21193, C257SE21284
Reexamination Certificate
active
10966153
ABSTRACT:
The present invention provides a method for processing a semiconductor device wherein a dielectric layer is partially converted into a silicon-oxy-nitride by incorporation of nitrogen atoms into the dielectric layer, which comprises a silicon oxide. Before the introduction of the nitrogen atoms into the dielectric layer, the dielectric layer is provided as a silicon oxide in which the atomic silicon to oxygen ration is greater than ½. In this way, MOS transistors are obtained with a high quality interface between the dielectric region and semiconductor substrate, and a dielectric region which is impermeable to impurity atoms from the gate region and which has a thickness which is substantially equal to the dielectric layer as deposited.
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European Search Report for Application No. EP 03 44 7258 mailed Mar. 5, 2004.
Nanjo, Junji, et al.Composition Analysis of Anodic SiO2/Si Interface Region Using the XPS Method, Electronics and Communications in Japan, Part 2, vol. 76, No. 6, 1993, pp. 99-106, Scripta Technica, Inc.
Sigmon, T.W.Stoichiometry of thin silicon oxide layers on silicon, Applied Physics Letters, vol. 24, No. 3, 1974, pp. 105-107, American Institute of Physics.
Cubaynes Florence Nathalie
Venezia Vincent Charles
Interuniversitair Microelektronika Centrum (IMEC)
Knobbe Martens Olson & Bear LLP
Koninklijke Philips Electronics , N.V.
Toledo Fernando L.
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