Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-31
2006-01-31
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S595000, C438S749000
Reexamination Certificate
active
06991991
ABSTRACT:
A method for preventing to form a spacer undercut in SEG preclean process is provided. This present invention utilizes HFEG solution to etch the first spacer and the second spacer simultaneously, which can prevent from producing a spacer undercut, meanwhile; a native oxide layer upon a surface of a semiconductor substrate is removed. Hence, the clean surface on the semiconductor substrate is obtained. This method includes the steps as follows: Firstly, the native oxide layer upon the surface of the semiconductor substrate is removed by DHF (HF in deionized water) solution. Then, etching the first spacer and the second spacer at the same time by HFEG (HF diluted by ethylene glycol) solution. Also, the native oxide upon the semiconductor substrate is removed. Therefore, it obtains the clean semiconductor surface without a serious spacer undercut.
REFERENCES:
patent: 4269654 (1981-05-01), Deckert et al.
patent: 4820654 (1989-04-01), Lee
patent: 6087235 (2000-07-01), Yu
patent: 6174787 (2001-01-01), Fuller et al.
patent: 6190977 (2001-02-01), Wu
patent: 6261911 (2001-07-01), Lee et al.
patent: 6326281 (2001-12-01), Violette et al.
patent: 6355533 (2002-03-01), Lee
patent: 6475893 (2002-11-01), Giewont et al.
patent: 6545317 (2003-04-01), Hokazono et al.
patent: 6635938 (2003-10-01), Nakahata et al.
patent: 6683356 (2004-01-01), Tsuchiaki
patent: 2001/0045612 (2001-11-01), Inard et al.
Chen Yu-Kun
Cheng Ya-Lun
Chien Chin-Cheng
Yang Neng-Hui
Malsawma Lex H.
Nath & Associates PLLC
Novick Harold L.
Smith Matthew
United Microelectronics Corp.
LandOfFree
Method for preventing to form a spacer undercut in SEG... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for preventing to form a spacer undercut in SEG..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preventing to form a spacer undercut in SEG... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3602755