Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-03
2007-04-03
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S778000, C438S798000, C257SE21577
Reexamination Certificate
active
10897479
ABSTRACT:
Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or reactively form an permeation barrier before a diffusion barrier material is deposited on the feature. The diffusion barrier may, for example, be deposited by CVD using metalorganic vapor reagents. The feature is then filled with copper metal and further processed to complete a dual damascene interconnect. The plasma predeposition treatment advantageously reduces the amount of permeation of the metalorganic reagent into the interlayer dielectric.
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Chu Karen
Danek Michal
Vijayendran Anil
Anya Igwe U.
Baumeister B. William
Lathrop & Gage LC
Novellus Systems Inc.
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