Method for preventing latch-up in cmos integrated circuit device

Details Method for preventing latch-up in cmos integrated circuit device Method for preventing latch-up in cmos integrated circuit device

1998-05-09

1999-11-09

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438200, 438210, H01L 218238

Patent

active

059813229

ABSTRACT:
An integrated circuit structure for preventing latch-up of an integrated circuit device, such as a dynamic random access memory, that is operated with a negative substrate bias in use of the device. The integrated circuit structure includes a p-type substrate having an n-well region formed therein, with a rectifying junction formed in a lightly doped portion of the n-well region and connected to provide a path to ground for clamping the substrate to ground during power-up conditions. In another embodiment, a rectifying junction formed in a lightly doped portion of the n-well region functions as a diode clamp for a pumped bias voltage for the n-well region. In forming the rectifying junction in the n-well region, the n-plus ion implantation mask that is used in forming n-plus doped regions in the n-well region is used to mask portions of the n-well region during the n-plus ion implantation process and a metal barrier layer is formed on the exposed lightly doped portions of the n-well region, so that a Schottky diode is formed. Also described is a method for fabricating an integrated circuit structure which includes forming a rectifying junction in the well portion for providing a diode clamp between voltage sources of the integrated circuit structure.

REFERENCES:
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patent: 4807010 (1989-02-01), Winnerl et al.
patent: 5032892 (1991-07-01), Chern et al.
patent: 5406123 (1995-04-01), Narayan
"IBM Technical Disclosure Bulletin, vol. 29, No.5 ", 1967, (Sep.1986).
Furuyama, T., et al., "A Latch-Up-Like New Failure Mechanism for High-Density CMOS Dynamic RAM's", IEEE J. of Solid-State Circuis, 25, 42-47,(1990) Feb.
Herman, L., "Overcoming the Problems of SCR Latchup", New Electronics, 4, 44-50, (1986)Mar. 4, 1986.

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