Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-31
2005-05-31
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S723000, C438S783000
Reexamination Certificate
active
06900118
ABSTRACT:
A method of forming an interlayer dielectric (ILD) layer. A dielectric layer containing boron and phosphorous is formed overlying a substrate. A plasma treatment is subsequently performed on the dielectric layer using argon or nitrogen as a process gas. A capping layer is formed in-situ overlying the dielectric layer to serve as the ILD layer with the dielectric layer. A reflow process is subsequently performed on the ILD layer. A method for preventing formation of etching defects in a contact is also disclosed.
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Chen Yan-Hong
Chen Yi-Nan
Tzou Kaan-Lu
Wu Chang-Rong
Nanya Technology Corporation
Nguyen Tuan H.
Quintero Law Office
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