Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-05-30
1996-03-19
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, C23C 1434
Patent
active
055001033
ABSTRACT:
A light-emitting layer is prepared by using sputtering gas containing H.sub.2 S gas at a concentration greater than 20% by volume, and by sputtering a target under the optimal electric discharge power corresponding to the concentration of H.sub.2 S gas. A light-emitting layer having good light-emitting characteristics is obtained under a high film-forming rate.
REFERENCES:
patent: 4279726 (1981-07-01), Baird et al.
patent: 4389295 (1983-06-01), Davey et al.
patent: 4675092 (1987-06-01), Baird et al.
Lagnado et al., "Rf-Sputtered . . . Crystals", The Journal of vacuum science and technology, vol. 7, No. 2, 1970, pp. 318-321.
Katou Hisato
Kawashima Tomoyuki
Nakamata Shin'ichi
Shibata Kazuyoshi
Taniguchi Harutaka
Fuji Electric & Co., Ltd.
Nguyen Nam
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