Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2007-07-03
2007-07-03
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C423S089000
Reexamination Certificate
active
10559980
ABSTRACT:
A process for is provided for synthesizing a compound having the formula E(GeH3)3wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH3Br and [CH3)3Si]3E are combined under conditions whereby E(GeH3)3is obtained. The E(GeH3)3is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH3)3can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.
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Bauer Matthew
Cook Candi
Kouvetakis John
Tolle John
Arizona Board of Regenta, a body corporate of the State of Arizo
Geyer Scott B.
McDonnell Boehnen & Hulbert & Berghoff LLP
Patel Reema
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