Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-24
2007-07-24
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21564
Reexamination Certificate
active
10499224
ABSTRACT:
In a FET having a thin-film SOI layer, to prevent a parasitic resistance increase in source/drain regions. To realize an elevated layer to be formed on the source/drain region without using a lithography process and without a fear of a short circuit. Element-isolation insulating films7, which are taller than a semiconductor layer3, are formed surrounding the island-shaped semiconductor layer (SOI layer)3, while gate electrodes5a,8awhich are taller than the element-isolation insulating films7are formed on the semiconductor layer3. A polycrystalline silicon film11is deposited on the whole surface. elevated layers11a,11bwhich are shorter than the element-isolation insulating film7are formed on the source/drain regions3a,3bby chemical-mechanical polishing and etching back. Silicide layers13ato13care formed on the gate electrode and on the elevated layers. An interlayer insulating film14is formed, and a metal electrode16is formed.
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Lee Jong Wook
Takemura Hisashi
Dickey Thomas L.
Hayes & Soloway P.C.
NEC Corporation
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