Method for preparing electrode for semiconductor device

Details Method for preparing electrode for semiconductor device Method for preparing electrode for semiconductor device

1992-12-28

1994-03-01

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430311, 430313, 430314, 430329, 430942, 2504923, G03C 500

Patent

active

052906647

ABSTRACT:
A preparation method of a gate electrode for semiconductor device which comprises forming a plurality of specific resist layers sensitive to an electron beam over a substrate through a silicon nitride film, subjecting the resist layers to an electron beam lithography to obtain an opening having a specific configuration at the opening portion, etching the silicon nitride film through the opening to form an opening in the silicon nitride film, etching the substrate through the opening of the silicon nitride film to form a cavity in the substrate, and forming a metal member on the substrate in the cavity in accordance with a metal-deposition and lift-off process to obtain the gate electrode in a projected shape.

REFERENCES:
patent: 4283483 (1981-08-01), Coane
patent: 4315984 (1982-02-01), Okazaki
patent: 4699870 (1987-10-01), Iwadate

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