Method for preparing a semiconductor wafer surface

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Compound semiconductor

Reexamination Certificate

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C438S660000, C438S677000

Reexamination Certificate

active

06903032

ABSTRACT:
A method for preparing a semiconductor wafer wherein rapid thermal annealing is conducted to smooth a free surface of a superficial zone that is supported by the wafer. The improvement includes treating the superficial zone before conducting the rapid thermal annealing to prevent pitting in the superficial zone during the rapid thermal annealing.

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