Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2005-09-06
2005-09-06
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S094000, C365S103000, C365S105000
Reexamination Certificate
active
06940770
ABSTRACT:
The invention includes an apparatus and method of selecting memory cells within a memory array. The method includes receiving a memory cell address. A column address and a row address are generated from the memory cell address. Row select lines or column select lines are pre-charged. A self-timed charging circuit is initiated to provide an adequate amount of time to charge a selected row, and to initiate elimination of static current flowing to unselected rows after a self-timed delay. The other of the row select lines or the column select lines are then pre-charged. Memory cells are selected based upon the column address and the row address. One of two states of the memory cells can be based upon sensing threshold voltages of sense lines that correspond with the selected memory cells.
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Eaton James Robert
Ku Joseph
Hewlett--Packard Development Company, L.P.
Nguyen Van-Thu
Short Brian R
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