Method for pre-retaining CB opening

Details Method for pre-retaining CB opening Method for pre-retaining CB opening

2006-12-05

2006-12-05

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S666000, C438S694000, C438S787000, C257SE21002

Reexamination Certificate

active

07144799

ABSTRACT:
Disclosed is a method for pre-retaining CB opening in a DRAM manufacture process, wherein a CB opening is filed with a photo-resist layer and an LPD oxidation layer that is filled at room temperature to avoid damaging caused by conventional etching techniques. The LPD oxidation layer and the photo-resist are replaced easily by a polysilicon layer and a BPSG layer.

REFERENCES:
patent: 6057581 (2000-05-01), Doan
patent: 6808984 (2004-10-01), Chen
patent: 6821872 (2004-11-01), Liao et al.
patent: 6977210 (2005-12-01), Chen et al.
patent: 2005/0085072 (2005-04-01), Kim et al.
patent: 2005/0239282 (2005-10-01), Chen et al.

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