Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-05-20
1999-05-18
Geist, Gary
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 41, 216 67, 134 12, 438735, H01L21/306
Patent
active
059045701
ABSTRACT:
The polymeric residues which remain after the plasma-enhanced subtractive etching of polycrystalline layers in reactive halogen-containing gases are removed by a combination ashing in oxygen gas and subsequent removal with an organic solvent.
REFERENCES:
patent: 5296093 (1994-03-01), Szwejkowski
patent: 5399464 (1995-03-01), Lee
CA:115:218649, Chem Abstract of "Effect of different surfaces on plasma stripping of photoresist", Chanana, Microelectron. J., 1991.
CA:124:18437, abs of SU1653442 (also attached a WPIDS derwent abs of the SU patent), Apr.1995.
"A Proven Sub-micron Photoresist Stripper Solution for Post Metal and Via Hole Processes" by Wai Mun Lee, EKC Technology, Inc. 2520, Barrington, Ct. Hayward CA pp.1-6.
Chang Wen-Cheng
Chen Sen-Fu
Liu Heng-Hsin
Yang Bao-Ru
Ackerman Stephen B.
Geist Gary
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
Vollano Jean F.
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