Method for plasma treatment and apparatus for plasma treatment

Details Method for plasma treatment and apparatus for plasma treatment Method for plasma treatment and apparatus for plasma treatment

1998-06-22

2000-04-25

Gulakowski, Randy

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 117 92, 117103, 117108, 118706, 118723R, 118723MW, 118723MA, C23F 100

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06054063&

ABSTRACT:
The high-frequency electric field is subjected to pulse modulation for 10 to 100 .mu.sec; the rise time of pulse is controlled to be not shorter than 2 .mu.sec but not longer than 50 .mu.sec; and the descent time of pulse is controlled to be not shorter than 10 .mu.sec but not longer than .phi..mu.sec. Thereby, the electron temperature in plasma is controlled at 2 eV or lower and the fluctuation of the density of negative ion in plasma is controlled at 20% or smaller.

REFERENCES:
patent: 4764394 (1988-08-01), Conrad
patent: 4808258 (1989-02-01), Otsubo et al.
patent: 5296272 (1994-03-01), Matossian et al.
patent: 5508227 (1996-04-01), Cham et al.
patent: 5662819 (1997-09-01), Kadomura
patent: 5779925 (1998-07-01), Hashomito et al.
English Abstract of Japanese Patent Application No. 56-155535, published Dec. 1, 1981.
English Abstract of Japanese Patent Application No. 5-334488, published Dec. 17, 1993.

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