Method for plasma processing at high pressure

Details Method for plasma processing at high pressure Method for plasma processing at high pressure

1994-03-28

1995-09-12

Nguyen, Nam

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

427508, 427553, 427595, 1566431, B44C 122, C23C 1500, C03C 2506

Patent

active

054494346

ABSTRACT:
A method for plasma processing includes using a relatively high magnetic field and a relatively high pressure to create a first plasma region adjacent a window of a processing chamber having a lower radiation absorption and a second plasma region adjacent a substrate holder having a higher radiation absorption. Accordingly, a cooler plasma region is created adjacent the window to prevent contaminants from being etched from the window and adjacent chamber surface, and hotter plasma region is created adjacent the substrate to increase the processing rate. Additionally, the relatively high pressure of the processing gas, preferably greater than about 10 Torr and more preferably greater than about 100 Torr, increases the density of the plasma thereby increasing the processing rate. Alternatively, a high magnetic field and a high pressure create a radiation absorption region which is on the order of centimeters thick, for example 5-10 centimeters thick. Preferably, a uniform magnetic field creates uniform absorption in the absorption region.

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