Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2006-02-03
2008-09-09
Owens, Douglas W. (Department: 2821)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192130, C204S298080, C204S298320, C204S298340, C118S72300R
Reexamination Certificate
active
07422664
ABSTRACT:
A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.
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Allen Adolph Miller
Ritchie Alan Alexander
Applied Materials Inc.
Moser IP Law Group
Owens Douglas W.
Tran Chuc
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