Method for plasma hardening of patterned photoresist layers

Details Method for plasma hardening of patterned photoresist layers Method for plasma hardening of patterned photoresist layers

1996-06-07

1997-11-18

Niebling, John

Fishing, trapping, and vermin destroying

437229, 15665911, 15663411, H01L 2144

Patent

active

056887191

ABSTRACT:
A method for plasma hardening a patterned photoresist layer. There is first provided a semiconductor substrate which has formed upon its surface a patterned photoresist layer. The patterned photoresist layer is then exposed to a hydrogen containing plasma for a time sufficient to harden the patterned photoresist layer against a Reactive Ion Etch (RIE) etch plasma to which the patterned photoresist layer is later exposed. A blanket layer residing beneath the plasma hardened photoresist layer may then be patterned through the Reactive Ion Etch (RIE) etch plasma without softening, erosion and/or consumption of the plasma hardened patterned photoresist layer.

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S.Wolf, "Silicon Processing For The VLSI Era-vol 1" -Lattice Press, Sunset Beach, CA, p. 452-453.

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