Method for plasma etching of high-K dielectric materials

Details Method for plasma etching of high-K dielectric materials Method for plasma etching of high-K dielectric materials

2005-06-07

2005-06-07

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S006000, C438S689000, C134S001000, C134S001300

Reexamination Certificate

active

06902681

ABSTRACT:
A method of etching high dielectric constant materials (a material with a dielectric constant greater than 4) using a halogen gas, reducing gas, and passivating gas chemistry. An embodiment of the method is accomplished using chlorine, carbon monoxide, and nitrogen to etch and passivate a hafnium dioxide layer.

REFERENCES:
patent: 5071714 (1991-12-01), Rodbell et al.
patent: 5112439 (1992-05-01), Reisman et al.
patent: 5188979 (1993-02-01), Filipiak
patent: 5337207 (1994-08-01), Jones et al.
patent: 5356833 (1994-10-01), Maniar et al.
patent: 5667700 (1997-09-01), Rudigier et al.
patent: 6040248 (2000-03-01), Chen et al.
patent: 6174766 (2001-01-01), Hayashi et al.
patent: 6184072 (2001-02-01), Kaushik et al.
patent: 6204141 (2001-03-01), Lou
patent: 6270568 (2001-08-01), Droopad et al.
patent: 6271115 (2001-08-01), Liu et al.
patent: 6297095 (2001-10-01), Muralidhar et al.
patent: 6300202 (2001-10-01), Hobbs et al.
patent: 6319730 (2001-11-01), Ramdani et al.
patent: 6326261 (2001-12-01), Tsang et al.
patent: 6348386 (2002-02-01), Gilmer
patent: 6368517 (2002-04-01), Hwang et al.
patent: 2001/0055852 (2001-12-01), Moise et al.
patent: 2002/0072016 (2002-06-01), Chen et al.
patent: 2003/0170986 (2003-09-01), Nallan et al.
patent: 2004/0007561 (2004-01-01), Nallan et al.
patent: 2002-75972 (2002-03-01), None
patent: 01/51072 (2001-07-01), None
patent: 01/97257 (2001-12-01), None
Visokay, et al., “Application of HfSiON as a gate dielectric material,” Applied Physic Letters, 80 (17), 3183-3185, 2002.
Yee, et al., “Reactive radio frequency sputter deposition of higher nitrides of titanium, zirconium and hafnium,” J. Vac. Sci. Technol A 4(3) May/Jun. 1986, 381-387.

Affiliated with

Also associated with

Rating

Method for plasma etching of high-K dielectric materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for plasma etching of high-K dielectric materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for plasma etching of high-K dielectric materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3486348