Method for plasma etching a dielectric layer

Details Method for plasma etching a dielectric layer Method for plasma etching a dielectric layer

2006-06-06

2006-06-06

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S706000, C438S723000

Reexamination Certificate

active

07056830

ABSTRACT:
A method of etching a dielectric layer formed on a substrate including a sequence of processing cycles, wherein each cycle comprises steps of depositing an inactive polymeric film, activating the film to etch the structure, and removing the film is disclosed. In one embodiment, the method uses a fluorocarbon gas to form the polymeric film and a substrate bias to activate such film.

REFERENCES:
patent: 4628006 (1986-12-01), Rathbun et al.
patent: 4915777 (1990-04-01), Jucha et al.
patent: 5094983 (1992-03-01), Furthaler et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 5854135 (1998-12-01), Ko
patent: 6194325 (2001-02-01), Yang et al.
patent: 6215087 (2001-04-01), Akahori et al.
patent: 6223685 (2001-05-01), Gupta et al.
patent: 6284148 (2001-09-01), Laermer et al.
patent: 6294102 (2001-09-01), Bennett et al.
patent: 6569776 (2003-05-01), Ueda
patent: 6617253 (2003-09-01), Chu et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 2002/0168483 (2002-11-01), Nakase et al.

Affiliated with

Also associated with

Rating

Method for plasma etching a dielectric layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for plasma etching a dielectric layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for plasma etching a dielectric layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3623906