Method for photoresist stripping and treatment of low-k...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S725000, C438S958000, C257SE21026, C257SE21027

Reexamination Certificate

active

07598176

ABSTRACT:
A plasma processing operation uses a gas mixture of N2and H2to both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of the low-k material by forming a protective layer on the low-k dielectric material. Carbon from the photoresist layer is activated and caused to complex with the low-k dielectric, maintaining a suitably high carbon content and a suitably low dielectric constant. The plasma processing operation uses a gas mixture with H2constituting at least 10%, by volume, of the gas mixture.

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