Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-03-11
2008-03-11
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S508000, C438S508000
Reexamination Certificate
active
07341939
ABSTRACT:
In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the photo resist and DBARC. In order to provide better resolution in the DBARC for micro-features, an electric field is generated vertically through the coated wafer before or during post exposure baking (PEB) to create a uniform vertical distribution of H+ ions though the DBARC. The coated wafer is then developed to remove either the unexposed portions, or exposed portion of the DBARC. The cavities formed by the developer have side walls that are substantially vertical as a result of the uniform vertical distribution of the H+ ions.
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Liu He et al., Bottom Anti-Reflective Coatings (BARCs) for 157-nm Lithography, Copyright 2003 Society of Photo-Optical Instrumentation Engineers, pp. 1-10.
Ho Bang-Chein
Hung Hsueh-Liang
Lin Chih-Cheng
Oweyang Dah-Chung
Duane Morris LLP
Le Dung A.
Taiwan Semiconductor Maunfacturing Co., Ltd.
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