Method for patterning contact etch stop layers by using a...

Details Method for patterning contact etch stop layers by using a... Method for patterning contact etch stop layers by using a...

2007-03-28

2010-11-23

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S938000, C438S958000, C438S970000

Reexamination Certificate

active

07838354

ABSTRACT:
By performing a planarization process, for instance based on a planarization layer, prior to forming a resist mask for selectively removing a portion of a stressed contact etch stop layer, the strain-inducing mechanism of a subsequently deposited further contact etch stop layer may be significantly improved.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2006 041 006.8-33 dated Mar. 15, 2010.

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