Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-11
2005-10-11
Kennedy, Jennifer M. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S396000
Reexamination Certificate
active
06953722
ABSTRACT:
In a method for forming patterned ceramic layers, a ceramic material is deposited on a substrate and is subsequently densified by heat treatment, for example. In this case, the initially amorphous material is converted into a crystalline or polycrystalline form. In order that the now crystalline material can be removed again from the substrate, imperfections are produced in the ceramic material, for example by ion implantation. As a result, the etching medium can more easily attack the ceramic material, so that the latter can be removed with a higher etching rate. Through inclined implantation, the method can be performed in a self-aligning manner and the ceramic material can be removed on one side, by way of example, in trenches or deep trench capacitors.
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Braun et al. High-k Materials Challenge Deposition, Etch and Metrology, Nov. 1, 2002, Semiconductor International, pp. 1-6.
Gutsche Martin
Hecht Thomas
Jakschik Stefan
Kudelka Stephan
Schmeide Matthias
Greenberg Laurence A.
Infineon - Technologies AG
Kennedy Jennifer M.
Locher Ralph E.
Stemer Werner H.
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