Method for patterning and etching film layers of semiconductor d

Details Method for patterning and etching film layers of semiconductor d Method for patterning and etching film layers of semiconductor d

1995-02-02

1997-03-04

Schilling, Richard L.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 65, 1566431, C03C 1500, C03C 2506, C23F 100, B44C 122

Patent

active

056076010

ABSTRACT:
In a laser assisted semiconductor etching process, a krypton fluoride excimer laser operating at 248 nm excites a carbonyl dichloride COCl.sub.2 radical precursor gas which decomposes into carbon monoxide and also atomic chlorine that bonds to laser illuminated surface layer materials of semiconductor devices to create gaseous chlorides which desorb to perfect selective etching, the surface layer material being Cu, Al, amphorous silicon, Ga.sub.(x) Al.sub.(1-x) As, CuIn.sub.(x) Ga.sub.(1-x) Se.sub.2, CdZnS, ZnO and other materials useful in the manufacture of semiconductor devices and solar cells.

REFERENCES:
patent: 4260649 (1981-04-01), Denison et al.
patent: 4331504 (1982-05-01), Chuang et al.
patent: 4490210 (1984-12-01), Chen et al.
patent: 4490211 (1984-12-01), Chen et al.
patent: 4731158 (1988-03-01), Brannon
patent: 4892592 (1990-01-01), Dickson et al.
patent: 5010040 (1991-04-01), Vayman
patent: 5011567 (1991-04-01), Gonsiorawski
patent: 5024724 (1991-06-01), Hirono et al.
patent: 5266532 (1993-11-01), Russell et al.
patent: 5310989 (1994-05-01), Russell et al.
patent: 5354420 (1994-10-01), Russell et al.
W. Sesselmann, E. E. Marienero, T. J. Chuang "Laser-Induced Desorption and Etching Processes on Chlorinated Cu and Solid CuCl Surfaces", Applied Physics A. 209-221, 1986.
J. H. Brannon, K. W. Brannon, "Ultraviolet Photoetching of Copper" J. Vac. Sci. Technol. B 7, 1275 - 1283, (1989).

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