Method for patterning a semiconductor wafer

Details Method for patterning a semiconductor wafer Method for patterning a semiconductor wafer

2011-08-23

2011-08-23

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S316000

Reexamination Certificate

active

08003305

ABSTRACT:
A method for etching a pattern on a surface is disclosed. A mask layer is disposed over a surface and a resist is disposed over the mask layer. The resist is exposed to light through the mask exposing primary pattern and sidelobe regions. The resist is developed and the mask layer is etched according to the resist pattern. A first material is deposited over the mask layer, wherein a gap is formed beneath the material and over the primary pattern region. The material is etched back so that the gap is exposed, and the primary pattern region is etched using the first material as a mask.

REFERENCES:
patent: 6159661 (2000-12-01), Huang et al.
patent: 6355503 (2002-03-01), Schroeder
patent: 2005/0255633 (2005-11-01), Hacke
patent: 2006/0103694 (2006-05-01), Nguyen

Affiliated with

Also associated with

Rating

Method for patterning a semiconductor wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for patterning a semiconductor wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for patterning a semiconductor wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2781279