Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2011-03-29
2011-03-29
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S275000, C438S283000, C257SE21444
Reexamination Certificate
active
07915105
ABSTRACT:
The present disclosure provides a method for fabricating a semiconductor device. The method includes forming first, second, third, and fourth gate structures on a semiconductor substrate, each gate structure having a dummy gate, removing the dummy gate from the first, second, third, and fourth gate structures, thereby forming first, second, third, and fourth trenches, respectively, forming a metal layer to partially fill in the first, second, third, and fourth trenches, forming a first photoresist layer over the first, second, and third trenches, etching a portion of the metal layer in the fourth trench, removing the first photoresist layer, forming a second photoresist layer over the second and third trenches, etching the metal layer in the first trench and the remaining portion of the metal layer in the fourth trench, and removing the second photoresist layer.
REFERENCES:
patent: 6001698 (1999-12-01), Kuroda
patent: 6794281 (2004-09-01), Madhukar et al.
patent: 6921711 (2005-07-01), Cabral, Jr. et al.
patent: 2001/0055842 (2001-12-01), Uh et al.
patent: 2003/0205767 (2003-11-01), Ma et al.
patent: 2005/0009343 (2005-01-01), Fishburn et al.
patent: 2005/0266694 (2005-12-01), Brask et al.
patent: 2006/0160342 (2006-07-01), Doczy et al.
patent: 2009/0057769 (2009-03-01), Wei et al.
patent: 2009/0242997 (2009-10-01), Yu et al.
Chen Chi-Chun
Lin Shun Wu
Wang Chung-Ming
Yeh Matt
Haynes and Boone LLP
Lee Hsien-Ming
Parendo Kevin
Taiwan Semiconductor Manufacturing Company , Ltd.
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