Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-09-20
2005-09-20
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S788000, C438S791000, C438S792000, C438S958000
Reexamination Certificate
active
06946404
ABSTRACT:
A method for the passivation of a semiconductor substrate, wherein a SiNx:H layer is deposited on the surface of the substrate (1) by means of a PECVD process comprising the following steps:the substrate (1) is placed in a processing chamber (5) which has specific internal processing chamber dimensions;the pressure in the processing chamber is maintained at a relatively low value;the substrate (1) is maintained at a specific treatment temperature;a plasma (P) is generated by at least one plasma cascade source (3) mounted on the processing chamber (5) at a specific distance (L) from the substrate surface;at least a part of the plasma (P) generated by each source (3) is brought into contact with the substrate surface; andflows of silane and ammonia are supplied to said part of the plasma (P).
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Bijker Martin Dinant
Dings Franciscus Cornelius
Hompus Michael Adrianus Theodorus
Kessels Wilhelmus Mathijs Marie
Van De Sanden Mauritius Cornelis Maria
Berry Renee R.
OTB Group B.V.
Pillsbury Winthrop Shaw & Pittman LLP
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