Method for passivating a semiconductor substrate

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S788000, C438S791000, C438S792000, C438S958000

Reexamination Certificate

active

06946404

ABSTRACT:
A method for the passivation of a semiconductor substrate, wherein a SiNx:H layer is deposited on the surface of the substrate (1) by means of a PECVD process comprising the following steps:the substrate (1) is placed in a processing chamber (5) which has specific internal processing chamber dimensions;the pressure in the processing chamber is maintained at a relatively low value;the substrate (1) is maintained at a specific treatment temperature;a plasma (P) is generated by at least one plasma cascade source (3) mounted on the processing chamber (5) at a specific distance (L) from the substrate surface;at least a part of the plasma (P) generated by each source (3) is brought into contact with the substrate surface; andflows of silane and ammonia are supplied to said part of the plasma (P).

REFERENCES:
patent: 4223048 (1980-09-01), Engle, Jr.
patent: 4664747 (1987-05-01), Sekiguchi et al.
patent: 5534445 (1996-07-01), Tran et al.
patent: 5871591 (1999-02-01), Ruby et al.
patent: 6091021 (2000-07-01), Ruby et al.
patent: 198 12 558 (1999-09-01), None
patent: 0 887 437 (1998-12-01), None
patent: 0 887 737 (2001-04-01), None
de Graaf et al., “Amorphous hydrogenated carbon nitride films deposited via an expanding thermal plasma at high growth rate,” Thin Solid Films 333:29-34 (1998).
Soppe et al., “A high throughput PECVD reactor for deposition of passivating SiN layers,” 16thEPVSEC (European Photovoltaic Solar Energy Conference and Exhibition) Glasgow, May 2000.
Soppe et al., “Bulk and surface passivation by silicon nitride grown by remote microwave PECVD,” Paper No. VC 1.38, pp. 1-4, 17thEPVSEC, Munich, 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for passivating a semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for passivating a semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for passivating a semiconductor substrate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3450512

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.