Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-05-17
2005-05-17
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S635000, C438S768000, C438S798000
Reexamination Certificate
active
06893978
ABSTRACT:
A method for oxidizing a semiconductor topography is provided, which includes generating a plasma from a first gas comprising oxygen and a second gas adapted to enhance the generation of oxygen radicals from the first gas. In addition, the method includes extracting the oxygen radicals from the plasma and diffusing the oxygen radicals into one or more layers of the topography. In general, the second gas may include any gas having a component adapted to enhance the generation of oxygen radicals from the first gas. For example, in some embodiments, the second gas may include a gas including nitrogen. In such an embodiment, the ratio of the first gas to the second gas may be adapted to prevent the introduction of nitrogen within the oxidized topography. In addition or alternatively, such a method may include oxidizing a portion of a layer which has a thickness greater than approximately 6 angstroms.
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Daffer Kevin I.
Daffer McDaniel L.L.P.
Lettang Mollie F.
Malsawma Lex H.
Silicon Magnetic Systems
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