Method for oxidizing a layer, and associated holding devices...

Details Method for oxidizing a layer, and associated holding devices... Method for oxidizing a layer, and associated holding devices...

2003-07-26

2009-11-10

Andújar, Leonardo (Department: 2893)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S463000, C438S487000, C438S940000, C257SE21079, C257SE21282, C257SE21301

Reexamination Certificate

active

07615499

ABSTRACT:
A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of a holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

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