Method for optimizing a photolithographic mask

Details Method for optimizing a photolithographic mask Method for optimizing a photolithographic mask

2008-05-06

2008-05-06

Lin, Sun James (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000

Reexamination Certificate

active

07370313

ABSTRACT:
The invention relates to a method for optimizing a mask layout pattern comprising at least one structural feature. First a desired layout pattern is provided. Based on the desired layout pattern, an optimized reference diffraction coefficient is provided. After selecting an initial mask geometry having polygon-shaped structures, initial diffraction coefficients are calculated. A difference based on the reference diffraction coefficient and initial diffraction coefficients is used to optimize the initial geometry in order to provide a mask layout pattern.

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