Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1998-01-09
1999-11-02
Niebling, John F.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438785, 438763, H01L 2131, H01L 21469
Patent
active
059769904
ABSTRACT:
An exemplary implementation of the present invention discloses a semiconductor fabrication method for forming a film in a reactor. Process conditions (temperature and pressure) are initially stabilized prior to a film deposition cycle. Once process conditions are stable, chemical elements of are nucleated onto a substrate surface to form a nucleation surface of the film. The bulk portion of the film is then deposited onto the nucleation surface. Finally, after the bulk of the film is deposited the surface of the film is conditioned. To tailor a film the process conditions are varied during the film deposition cycle wherein at least one of the pressures and temperatures is varied by at least 10%. In a specific implementation, a capacitor dielectric of silicon nitride is tailored by varying the pressure for the bulk film deposition and by varying both the temperature and pressure for the film surface formation phase.
REFERENCES:
patent: 5212119 (1993-05-01), Hah et al.
patent: 5434110 (1995-07-01), Foster et al.
patent: 5665640 (1997-09-01), Foster et al.
Mercaldi Garry A.
Nuttall Michael L.
Thankur Randhir P. S.
Jones Josetta
Micro)n Technology, Inc.
Niebling John F.
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