Method for obtaining extreme selectivity of metal nitrides...

Details Method for obtaining extreme selectivity of metal nitrides... Method for obtaining extreme selectivity of metal nitrides...

2007-12-25

2007-12-25

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S238000

Reexamination Certificate

active

11000825

ABSTRACT:
Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal nitride layers relative to doped or undoped oxides, tungsten, polysilicon, and titanium nitride. A method is provided for producing an isolated capacitor, which can be used in a dynamic random access memory cell array, on a substrate using sacrificial layers selectively removed to expose outer surfaces of the bottom electrode.

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patent: 2006/0043451 (2006-03-01), Shea

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