Method for obtaining a steep retrograde channel profile

Details Method for obtaining a steep retrograde channel profile Method for obtaining a steep retrograde channel profile

1997-07-21

1999-11-23

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438162, 438203, 438290, 438302, H01L 21336

Patent

active

059899638

ABSTRACT:
A method of manufacturing a semiconductor device with a steep retrograde profile. The threshold voltage adjust dopant layer and the punchthrough prevent dopant layer are formed in the substrate. All surface capping layers are removed from the active device regions and, the semiconductor device is placed in a chamber and a high vacuum is established after which an inert atmosphere is introduced into the chamber. The anneal to repair the damage to the lattice and to activate the dopant ions in the dopant layers is done in the inert atmosphere with the surface of the substrate maintained clean, that is, free from a capping oxide or other layer formed on the surface of the substrate.

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