Method for nitridation of the interface between a dielectric...

Details Method for nitridation of the interface between a dielectric... Method for nitridation of the interface between a dielectric...

2006-01-18

2010-11-02

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S786000, C438S788000, C438S791000, C438S954000, C257SE21192, C257SE21679

Reexamination Certificate

active

07824991

ABSTRACT:
A MOSFET fabrication process comprises nitridation of the dielectric silicon interface so that silicon-dangling bonds are connected with nitrogen atoms creating silicon—nitrogen bonds, which are stronger than silicon-hydrogen bonds. A tunnel dielectric is formed on the substrate. A nitride layer is then formed over the tunnel dielectric layer. The top of the nitride layer is then converted to an oxide and the interface between the substrate and the tunnel dielectric is nitrided simultaneously with conversion of the nitride layer to oxide.

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