Method for multi-layer resist plasma etch

Details Method for multi-layer resist plasma etch Method for multi-layer resist plasma etch

2008-04-22

2008-04-22

Tran, Binh X. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S736000, C216S058000, C216S067000

Reexamination Certificate

active

07361607

ABSTRACT:
A method for etching a multi-layer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the multi-layer resist into the etch chamber. SO2gas flows into the etch chamber and a plasma is struck in the etch chamber while flowing the SO2gas. The multi-layer resist is then etched.

REFERENCES:
patent: 5145554 (1992-09-01), Seki et al.
patent: 6255022 (2001-07-01), Young et al.
patent: 6329109 (2001-12-01), Figura et al.
patent: 7141505 (2006-11-01), Nguyen et al.
patent: 2001/0046632 (2001-11-01), Young et al.
patent: 2002/0003126 (2002-01-01), Kumar et al.
patent: 2004/0129361 (2004-07-01), Chen et al.

Affiliated with

Also associated with

Rating

Method for multi-layer resist plasma etch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for multi-layer resist plasma etch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for multi-layer resist plasma etch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2800312