Method for monolithically integrating silicon carbide...

Details Method for monolithically integrating silicon carbide... Method for monolithically integrating silicon carbide...

2007-01-30

2007-01-30

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S415000, C257SE29324

Reexamination Certificate

active

10384492

ABSTRACT:
A method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer is formed over the circuitry having a slower etch rate than the etch rate of the silicon carbide substrate. Microelectromechanical structures supported by the substrate are then formed. The circuitry comprises a field effect transistor in one embodiment, and the protective layer comprises a heavy metal layer.

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